PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd. Glenair, Inc.
|
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C) TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五(巴西)总裁| 200安培我(丙)
|
CERAMATE TECHNOLOGY CO., Ltd.
|
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
GBU610 GBU608 |
6.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components Intern...
|
BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五(巴西)总裁| 300我(丙) TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 150A一(c TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 50A条一(c
|
ON Semiconductor RECOM Electronic GmbH
|
6DI20C-050 |
POWER TRANSISTOR MODULE
|
http:// Fuji Electric
|
1DI400A-120 |
POWER TRANSISTOR MODULE
|
http:// FUJI[Fuji Electric]
|
2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|